Authors: Kehmoh Lin YuYu Chen
Publish Date: 2009/05/01
Volume: 51, Issue: 2, Pages: 215-221
Abstract
In this study we investigated the influences of gallium concentration and a rapid thermal annealing process on the electrical and optical properties of ZnOGa GZO films prepared by sol–gel method Experimental data indicated that the preferential growth directions of ZnO crystallites were the 002 and 103 axes This phenomenon implied that the nucleation and growth behaviors of ZnO crystallites were changed by the infrared heating procedure and monoethanolamine Furthermore since the deposited sol films were heated simultaneously evenly and rapidly dopant material Ga got the opportunity to replace Zn instead of forming oxides embedded in grain boundary areas Thus carrier concentration of the GZO films can be considerably enhanced while the mobility of the GZO films was not apparently affected in our experiments It was also found that the carrier concentration was not sensitive to Ga/Zn ratio even though higher Ga concentration led to lower mobility The best sample with a resistivity of 220 × 10−3 Ω cm and a transmittance of over 80 in visible region was achieved with 10 at Ga
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