Authors: PoTsung Hsieh Ricky WenKuei Chuang ChaoQun Chang ChihMing Wang ShoouJinn Chang
Publish Date: 2010/10/30
Volume: 58, Issue: 1, Pages: 42-47
Abstract
Yttriumdoped ZnO gel was spincoated on the SiO2/Si substrate The asprepared ZnOY YZO thin films then underwent a rapid thermal annealing RTA process conducted at various temperatures The structural and photoluminescence characteristics of the YZO films were discussed thereafter Our results indicated that the grain size of YZO thin films being treated with various annealing temperatures became smaller as compared to the ones without being doped with yttrium Furthermore unlike other ZnO films the grains of YZO thin films appeared to separate from one another rather than aggregating together as both types of the films were annealed under the same environment The photoluminescence characteristic measured showed that the UV emission was the only radiation obtained However the UV emission intensity of YZO thin film was much stronger than that of the ZnO thin film after annealing them with the same condition It was also found that the intensity increased with an increase in the annealing temperature which was caused by the exciton generated and the texture surface of the YZO thin film
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