Authors: Kehmoh Lin HsinCheng Chen YuYu Chen Kengyu Chou
Publish Date: 2010/05/27
Volume: 55, Issue: 3, Pages: 369-376
Abstract
Using different precursor preparation heating methods and initial layers this work investigated the relation between the microstructural and electrical properties of ZnOAl AZO films prepared by sol–gel method on glass and silicon substrates It was found that adding monoethanolamine MEA using initial layers or an intentionally produced steep temperature gradient obviously promoted film growth along the 002 direction However the carrier mobility rose only a little while the carrier concentration was not affected or even reduced Generally speaking the film conductivity was not evidently improved It could be concluded that all three methods are advantageous for enhancing the crystallographic quality and therefore the mobility of the AZO films but the major reason for the poor conductivity of the sol–gel derived ZnO films was the low activation of the dopant which is the key factor for further improvements and should be solved first
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