Authors: HaeChang Jeong GiSeok Heo EunMi Kim HongGyu Park Ju Hwan Lee JeongMin Han DaeShik Seo
Publish Date: 2016/04/04
Volume: 79, Issue: 1, Pages: 29-36
Abstract
We successfully demonstrated the high performance of liquid crystal LC devices without capacitance hysteresis using ionbeam IBirradiated GaSnO in solution This method is widely used for obtaining inorganic films although it yields poor crystallinity owing to its cost effectiveness and high flexibility in combining materials Atomic force microscopy and Xray photoelectron spectroscopy analyses determined that IB irradiation on the films had an effect which enabled the elucidation of the mechanism for LC alignment Strong IB irradiation on GaSnO induced the formation of spherical particles on the films and rearrangement of the chemical bonds linkage of Ga–Sn–O and gradually oxidized films which could preserve the anisotropic characteristics to unidirectionally align LC molecules on the surface Because rough surfaces effectively increase the electric field the strongly restructured GaSnO surface led to a decrease in threshold voltages Moreover strong IB irradiation effectively released volume charges when the states of LC molecules were switched “on” and “off” which is attributed to a reduction in oxygen bonding derived from hydroxyl groups responsible for capturing neutral electrons Therefore an IBirradiated GaSnO film is appropriate as an alternative alignment layer for advanced energy efficient hysteresisfree LC display devices
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