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Title of Journal: J Comput Electron

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Abbravation: Journal of Computational Electronics

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Kluwer Academic Publishers-Plenum Publishers

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1572-8137

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Issues in the modeling of carbon nanotube FETs St

Authors: D L John D L Pulfrey
Publish Date: 2006/12/09
Volume: 6, Issue: 1-3, Pages: 175-178
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Abstract

Factors affecting the modeling of practical carbon nanotube fieldeffect transistors are addressed namely noncoaxial geometries such as the doubleplanar gate and the semicylindrical gate the thickness of the gate metalization the azimuthal variation of the potential and the current The pin device is used to illustrate the importance of these factors

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Other Papers In This Journal:
  1. Towards the global modeling of InGaAs-based pseudomorphic HEMTs
  2. Influence of skin effect on the series resistance of millimeter-wave IMPATT devices
  3. Analog and RF performance investigation of cylindrical surrounding-gate MOSFET with an analytical pseudo-2D model
  4. Performance analysis of fully depleted triple material surrounding gate (TMSG) SOI MOSFET
  5. First-principles study of spin transport in $$\hbox {CrO}_{2}\hbox {-SiCNT-CrO}_{2}$$ magnetic tunnel junction
  6. Full band Monte Carlo simulation of dislocation effects on 250 nm AlGaN-GaN HEMT
  7. Quantum dot blinking: relevance to physical limits for nanoscale optoelectronic device
  8. Electron transport in self-switching nano-diodes
  9. Electron transport in self-switching nano-diodes
  10. Boundary condition at the junction
  11. Piezoelectric effects on carrier capturing time in a hybrid p–n junction system: a numerical study using finite element method
  12. Regional approach to model charges and capacitances of intrinsic carbon nanotube field effect transistors
  13. Dielectric pocket double gate junctionless FET: a new MOS structure with improved subthreshold characteristics for low power VLSI applications
  14. Current progress in modeling self-heating effects in FD SOI devices and nanowire transistors
  15. Composition dependence of fundamental properties of $$\hbox {Cd}_{\mathrm{1-x}}\hbox {Co}_\mathrm{x}$$Te magnetic semiconductor alloys
  16. A new source heterojunction strained channel structure for ballistic gate all around nanowire transistor
  17. Modeling and simulation of the diffusive transport in a nanoscale Double-Gate MOSFET
  18. Yield-driven power-delay-optimal CMOS full-adder design complying with automotive product specifications of PVT variations and NBTI degradations
  19. Computational study of double-gate graphene nano-ribbon transistors
  20. A new approach to analyzing anisotropic and non-parabolic effects on quantum wires
  21. 3D simulation of a silicon quantum dot in a magnetic field based on current spin density functional theory
  22. Numerical analysis of electron optical system with microchannel plate
  23. Exploration of Na + ,K + -ATPase ion permeation pathways via molecular dynamic simulation and electrostatic analysis
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