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Title of Journal: J Comput Electron

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Abbravation: Journal of Computational Electronics

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Springer US

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DOI

10.1007/bf02515390

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1572-8137

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Modeling and simulation of the diffusive transport

Authors: P Pietra N Vauchelet
Publish Date: 2008/06/13
Volume: 7, Issue: 2, Pages: 52-65
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Abstract

In this work we present the mathematical modeling and the simulation of the diffusive transport of an electron gas confined in a nanostructure A coupled quantumclassical system is considered where the coupling occurs in the momentum variable the electrons are like point particles in the direction parallel to the gas while they behave like waves in the transverse direction A driftdiffusion description in the transport direction is obtained thanks to an asymptotic limit of the Boltzmann transport equation for confined electrons The system is used to model the transport of charged carriers in a nanoscale DoubleGate MOSFET Simulations of transport in such a device are presented

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  2. Influence of skin effect on the series resistance of millimeter-wave IMPATT devices
  3. Analog and RF performance investigation of cylindrical surrounding-gate MOSFET with an analytical pseudo-2D model
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  7. Quantum dot blinking: relevance to physical limits for nanoscale optoelectronic device
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  15. Current progress in modeling self-heating effects in FD SOI devices and nanowire transistors
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