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Title of Journal: J Comput Electron

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Abbravation: Journal of Computational Electronics

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Springer US

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DOI

10.1007/s00421-004-1301-4

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1572-8137

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Towards the global modeling of InGaAsbased pseudo

Authors: J S AyubiMoak R Akis D K Ferry S M Goodnick N Faralli M Saraniti
Publish Date: 2008/02/15
Volume: 7, Issue: 3, Pages: 187-191
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Abstract

We utilize a 3D fullband Cellular Monte Car lo CMC device simulator to model ultrashort gate length pseudomorphic highelectronmobility transistors pHEMTs We present the static dc device characteristics and rf response for gate lengths ranging from 10 nm to 50 nm Preliminary passive results using 3D fullwave Maxwell solver are also presented to illustrate the usefulness of and insight that a future coupled fullband/fullwave simulator will provide in more accurately modeling the high frequency performance of pHEMTs

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