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Title of Journal: J Comput Electron

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Abbravation: Journal of Computational Electronics

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Springer US

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DOI

10.1016/0031-9422(96)00092-1

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1572-8137

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Computational study of doublegate graphene nanor

Authors: Gengchiau Liang Neophytos Neophytou Mark S Lundstrom Dmitri E Nikonov
Publish Date: 2008/03/28
Volume: 7, Issue: 3, Pages: 394-397
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Abstract

The ballistic performance of graphene nanoribbon GNR MOSFETs with different width of armchair GNRs is examined using a realspace quantum simulator based on the Nonequilibrium Green’s Function NEGF approach selfconsistently coupled to a 3D Poisson’s equation for electrostatics GNR MOSFETs show promising device performance in terms of low subthreshold swing and small draininducedbarrierlowing due to their excellent electrostatics and gate control single monolayer However the quantum tunneling effects play an import role in the GNR device performance degradation for wider width GNR MOSFETs due to their reduced bandgap At 22 nm width the OFF current performance is completely dominated by tunneling currents making the OFFstate of the device difficult to control

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Other Papers In This Journal:
  1. Towards the global modeling of InGaAs-based pseudomorphic HEMTs
  2. Influence of skin effect on the series resistance of millimeter-wave IMPATT devices
  3. Analog and RF performance investigation of cylindrical surrounding-gate MOSFET with an analytical pseudo-2D model
  4. Performance analysis of fully depleted triple material surrounding gate (TMSG) SOI MOSFET
  5. First-principles study of spin transport in $$\hbox {CrO}_{2}\hbox {-SiCNT-CrO}_{2}$$ magnetic tunnel junction
  6. Full band Monte Carlo simulation of dislocation effects on 250 nm AlGaN-GaN HEMT
  7. Quantum dot blinking: relevance to physical limits for nanoscale optoelectronic device
  8. Electron transport in self-switching nano-diodes
  9. Electron transport in self-switching nano-diodes
  10. Boundary condition at the junction
  11. Piezoelectric effects on carrier capturing time in a hybrid p–n junction system: a numerical study using finite element method
  12. Issues in the modeling of carbon nanotube FETs: Structure, gate thickness, and azimuthal asymmetry
  13. Regional approach to model charges and capacitances of intrinsic carbon nanotube field effect transistors
  14. Dielectric pocket double gate junctionless FET: a new MOS structure with improved subthreshold characteristics for low power VLSI applications
  15. Current progress in modeling self-heating effects in FD SOI devices and nanowire transistors
  16. Composition dependence of fundamental properties of $$\hbox {Cd}_{\mathrm{1-x}}\hbox {Co}_\mathrm{x}$$Te magnetic semiconductor alloys
  17. A new source heterojunction strained channel structure for ballistic gate all around nanowire transistor
  18. Modeling and simulation of the diffusive transport in a nanoscale Double-Gate MOSFET
  19. Yield-driven power-delay-optimal CMOS full-adder design complying with automotive product specifications of PVT variations and NBTI degradations
  20. A new approach to analyzing anisotropic and non-parabolic effects on quantum wires
  21. 3D simulation of a silicon quantum dot in a magnetic field based on current spin density functional theory
  22. Numerical analysis of electron optical system with microchannel plate
  23. Exploration of Na + ,K + -ATPase ion permeation pathways via molecular dynamic simulation and electrostatic analysis
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