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Title of Journal: J Comput Electron

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Abbravation: Journal of Computational Electronics

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Springer US

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DOI

10.1002/9781118920497.ch4

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1572-8137

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Performance analysis of fully depleted triple mate

Authors: P Suveetha Dhanaselvam N B Balamurugan
Publish Date: 2014/01/10
Volume: 13, Issue: 2, Pages: 449-455
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Abstract

In this paper analytical model for threshold voltage is derived for fully depleted Triple material Surrounding gate TMSG SOI MOSFET Three gate material of different work functions are introduced in the SOI MOSFET structure to reduce the short channel effects The two dimensional Poisson equation is solved and based on parabolic approximation method the model for threshold voltage is developed The threshold voltage is analyzed for device parameters such as gate length ratios oxide thickness silicon thickness doping concentration The results of the analytical model values are validated using MEDICI simulation

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