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Title of Journal: J Comput Electron

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Abbravation: Journal of Computational Electronics

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Springer US

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DOI

10.1007/bf02971647

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1572-8137

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Analog and RF performance investigation of cylindr

Authors: Angsuman Sarkar Swapnadip De Anup Dey Chandan Kumar Sarkar
Publish Date: 2012/02/29
Volume: 11, Issue: 2, Pages: 182-195
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Abstract

We report a systematic quantitative investigation of analog and RF performance of cylindrical surroundinggate SRG silicon MOSFET To derive the model a pseudotwodimensional 2D approach applying Gauss’s law in the channel region is extended for the cylindrical SRG MOSFET Based on surface potential approach expressions of drain current and differential capacitances are obtained analytically Analog/RF figures of merit of SRG MOSFET are studied including transconductance efficiency g m/I d intrinsic gain output resistance cutoff frequency f T maximum oscillation frequency f max and gain bandwidth product GBW The trends related to their variations along the downscaling of dimension are provided In order to validate our model the modeled predictions have been extensively compared with the simulated characteristics obtained from the ATLAS device simulator and a nice agreement is observed with a wide range of geometrical parameters

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