Authors: D Vasileska K Raleva A Hossain S M Goodnick
Publish Date: 2012/05/18
Volume: 11, Issue: 3, Pages: 238-248
Abstract
In this paper we summarize 6 years of work on modeling selfheating effects in nanoscale devices at Arizona State University ASU We first describe the key features of the electrothermal Monte Carlo device simulator the twodimensional and the threedimensional version of the tool and then we present series of representative simulation results that clearly illustrate the importance of selfheating in larger nanoscale devices made in silicon on insulator technology SOI Our simulation results also show that in the smallest devices considered the heat is in the contacts not in the active channel region of the device Therefore integrated circuits get hotter due to larger density of devices but the device performance is only slightly degraded at the smallest device size This is because of two factors pronounced velocity overshoot effect and smaller thermal resistance of the buried oxide layer Efficient removal of heat from the metal contacts is still an unsolved problem and can lead to a variety of nondesirable effects including electromigration We propose ways how heat can be effectively removed from the device by using silicon on diamond and silicon on AlN technologies We also study the interplay of Coulomb interactions due to the presence of a random trap at the source end of the channel and the selfheating effects We illustrate the influence of a positive and a negative trap on the magnitude of the oncurrent and the role of the potential barrier at the source end of the channel
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