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Title of Journal: J Comput Electron

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Abbravation: Journal of Computational Electronics

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Springer US

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DOI

10.1007/bf02306900

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1572-8137

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Current progress in modeling selfheating effects

Authors: D Vasileska K Raleva A Hossain S M Goodnick
Publish Date: 2012/05/18
Volume: 11, Issue: 3, Pages: 238-248
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Abstract

In this paper we summarize 6 years of work on modeling selfheating effects in nanoscale devices at Arizona State University ASU We first describe the key features of the electrothermal Monte Carlo device simulator the twodimensional and the threedimensional version of the tool and then we present series of representative simulation results that clearly illustrate the importance of selfheating in larger nanoscale devices made in silicon on insulator technology SOI Our simulation results also show that in the smallest devices considered the heat is in the contacts not in the active channel region of the device Therefore integrated circuits get hotter due to larger density of devices but the device performance is only slightly degraded at the smallest device size This is because of two factors pronounced velocity overshoot effect and smaller thermal resistance of the buried oxide layer Efficient removal of heat from the metal contacts is still an unsolved problem and can lead to a variety of nondesirable effects including electromigration We propose ways how heat can be effectively removed from the device by using silicon on diamond and silicon on AlN technologies We also study the interplay of Coulomb interactions due to the presence of a random trap at the source end of the channel and the selfheating effects We illustrate the influence of a positive and a negative trap on the magnitude of the oncurrent and the role of the potential barrier at the source end of the channel


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  2. Influence of skin effect on the series resistance of millimeter-wave IMPATT devices
  3. Analog and RF performance investigation of cylindrical surrounding-gate MOSFET with an analytical pseudo-2D model
  4. Performance analysis of fully depleted triple material surrounding gate (TMSG) SOI MOSFET
  5. First-principles study of spin transport in $$\hbox {CrO}_{2}\hbox {-SiCNT-CrO}_{2}$$ magnetic tunnel junction
  6. Full band Monte Carlo simulation of dislocation effects on 250 nm AlGaN-GaN HEMT
  7. Quantum dot blinking: relevance to physical limits for nanoscale optoelectronic device
  8. Electron transport in self-switching nano-diodes
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  12. Issues in the modeling of carbon nanotube FETs: Structure, gate thickness, and azimuthal asymmetry
  13. Regional approach to model charges and capacitances of intrinsic carbon nanotube field effect transistors
  14. Dielectric pocket double gate junctionless FET: a new MOS structure with improved subthreshold characteristics for low power VLSI applications
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  16. A new source heterojunction strained channel structure for ballistic gate all around nanowire transistor
  17. Modeling and simulation of the diffusive transport in a nanoscale Double-Gate MOSFET
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  21. 3D simulation of a silicon quantum dot in a magnetic field based on current spin density functional theory
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