Paper Search Console

Home Search Page About Contact

Journal Title

Title of Journal: J Comput Electron

Search In Journal Title:

Abbravation: Journal of Computational Electronics

Search In Journal Abbravation:

Publisher

Springer US

Search In Publisher:

DOI

10.1007/bf01340840

Search In DOI:

ISSN

1572-8137

Search In ISSN:
Search In Title Of Papers:

Regional approach to model charges and capacitance

Authors: Nune V Sudheer Anjan Chakravorty
Publish Date: 2012/02/11
Volume: 11, Issue: 2, Pages: 166-171
PDF Link

Abstract

Estimation of total channel charge Q Tot of carbon nanotube field effect transistor from the selfconsistently computed charge density Q Top at the top of conduction band subband minima is found to be inaccurate A regional approach based on extended ballistic transport theory is proposed to model Q Tot and its partitioning into source and drain components The models for charges and subsequently derived capacitances are validated with the numerically simulated data obtained using semiclassical technique The model agreement with numerical data shows the superiority of our regional approach compared to ones obtained from only the information of Q Top

Keywords:

References

.
Search In Abstract Of Papers:
Other Papers In This Journal:
  1. Towards the global modeling of InGaAs-based pseudomorphic HEMTs
  2. Influence of skin effect on the series resistance of millimeter-wave IMPATT devices
  3. Analog and RF performance investigation of cylindrical surrounding-gate MOSFET with an analytical pseudo-2D model
  4. Performance analysis of fully depleted triple material surrounding gate (TMSG) SOI MOSFET
  5. First-principles study of spin transport in $$\hbox {CrO}_{2}\hbox {-SiCNT-CrO}_{2}$$ magnetic tunnel junction
  6. Full band Monte Carlo simulation of dislocation effects on 250 nm AlGaN-GaN HEMT
  7. Quantum dot blinking: relevance to physical limits for nanoscale optoelectronic device
  8. Electron transport in self-switching nano-diodes
  9. Electron transport in self-switching nano-diodes
  10. Boundary condition at the junction
  11. Piezoelectric effects on carrier capturing time in a hybrid p–n junction system: a numerical study using finite element method
  12. Issues in the modeling of carbon nanotube FETs: Structure, gate thickness, and azimuthal asymmetry
  13. Dielectric pocket double gate junctionless FET: a new MOS structure with improved subthreshold characteristics for low power VLSI applications
  14. Current progress in modeling self-heating effects in FD SOI devices and nanowire transistors
  15. Composition dependence of fundamental properties of $$\hbox {Cd}_{\mathrm{1-x}}\hbox {Co}_\mathrm{x}$$Te magnetic semiconductor alloys
  16. A new source heterojunction strained channel structure for ballistic gate all around nanowire transistor
  17. Modeling and simulation of the diffusive transport in a nanoscale Double-Gate MOSFET
  18. Yield-driven power-delay-optimal CMOS full-adder design complying with automotive product specifications of PVT variations and NBTI degradations
  19. Computational study of double-gate graphene nano-ribbon transistors
  20. A new approach to analyzing anisotropic and non-parabolic effects on quantum wires
  21. 3D simulation of a silicon quantum dot in a magnetic field based on current spin density functional theory
  22. Numerical analysis of electron optical system with microchannel plate
  23. Exploration of Na + ,K + -ATPase ion permeation pathways via molecular dynamic simulation and electrostatic analysis
Search Result: