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Title of Journal: J Comput Electron

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Abbravation: Journal of Computational Electronics

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Springer US

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DOI

10.1016/0305-0491(83)90096-2

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1572-8137

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A new source heterojunction strained channel struc

Authors: Reza Hosseini Neda Teimourzadeh Morteza Fathipour
Publish Date: 2013/08/22
Volume: 13, Issue: 1, Pages: 170-179
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Abstract

A new type of Gate All Around Nanowire Transistor GAA NWT which employs source heterojunction and strained channel is proposed and its electrical characteristics are compared with SiGe GAA NWT and with conventional Silicon GAA NWT The effect of bandoffset energy at the source SiGe/strainedSi heterojunction is to enhance carriers’ kinetic energy when injected from the source into the channel In this analysis a quantum mechanical transport approach based on nonequilibrium Green’s function method in the frame work of effective mass theory is employed Simulation routine consists of self consistent solutions of a three dimensional Poisson’s equation a Schrodinger equation on the radial direction and also transport equation We analyze the electrical characteristics of the source heterojunction strained channel GAA NWT Also the advantages of this novel structure in terms of current drive capability and conduction band edge are discussed It is shown that proposed structure provides a higher on current lower leakage lower threshold voltage and lower subthreshold slope in comparison with SiGe GAA NWT and conventional Silicon GAA NWT

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