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Title of Journal: J Comput Electron

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Abbravation: Journal of Computational Electronics

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Springer US

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DOI

10.1007/s10825-015-0725-x

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1572-8137

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Firstprinciples study of spin transport in hbo

Authors: Sudhanshu Choudhary Anurag Chauhan
Publish Date: 2015/07/17
Volume: 14, Issue: 3, Pages: 852-856
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Abstract

We report the spin transport in silicon carbide nanotube based magnetic tunnel junction with halfmetallicferromagnet hbox CrO 2 as electrodes The simulations based on first principles suggest high tunnel magnetoresistance sim 100  at zero bias TMR remains high at higher bias voltages I–V characteristics show that spin current in parallel magnetic configuration is much higher than the spin current in antiparallel configuration Perfect spinfiltration effect is obtained for this structure Transmission coefficients are also calculated to understand the spin and bias dependent nonequilibrium transport properties

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