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Title of Journal: J Comput Electron

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Abbravation: Journal of Computational Electronics

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Springer US

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DOI

10.1016/0021-9150(87)90266-8

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1572-8137

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Exploration of NaSuperscript+/SuperscriptKSu

Authors: J E Fonseca S Mishra S Kaya R F Rakowski
Publish Date: 2008/02/26
Volume: 7, Issue: 1, Pages: 20-23
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Abstract

Biologicallyinspired nanodevices can serve as “natural” alternatives to conventional semiconductor devices in many applications from information storage to mechanical rotors In this work we consider an ATPpowered transmembrane protein the Na+K+ATPase which has appealing functionality but still lacks an “atomistic” picture capable of elucidating its operation The vast collection of experimental literature on the Na+K+ATPase gives a unique advantage to this protein in developing and validating computational tools We have performed extensive molecular dynamic simulations of the Na+K+ATPase in an accurate biological environment followed by timeaveraged electrostatic analysis to investigate the ionbinding loci and access/egress pathways that cations may take through the protein as they are transported across the membrane

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Other Papers In This Journal:
  1. Towards the global modeling of InGaAs-based pseudomorphic HEMTs
  2. Influence of skin effect on the series resistance of millimeter-wave IMPATT devices
  3. Analog and RF performance investigation of cylindrical surrounding-gate MOSFET with an analytical pseudo-2D model
  4. Performance analysis of fully depleted triple material surrounding gate (TMSG) SOI MOSFET
  5. First-principles study of spin transport in $$\hbox {CrO}_{2}\hbox {-SiCNT-CrO}_{2}$$ magnetic tunnel junction
  6. Full band Monte Carlo simulation of dislocation effects on 250 nm AlGaN-GaN HEMT
  7. Quantum dot blinking: relevance to physical limits for nanoscale optoelectronic device
  8. Electron transport in self-switching nano-diodes
  9. Electron transport in self-switching nano-diodes
  10. Boundary condition at the junction
  11. Piezoelectric effects on carrier capturing time in a hybrid p–n junction system: a numerical study using finite element method
  12. Issues in the modeling of carbon nanotube FETs: Structure, gate thickness, and azimuthal asymmetry
  13. Regional approach to model charges and capacitances of intrinsic carbon nanotube field effect transistors
  14. Dielectric pocket double gate junctionless FET: a new MOS structure with improved subthreshold characteristics for low power VLSI applications
  15. Current progress in modeling self-heating effects in FD SOI devices and nanowire transistors
  16. Composition dependence of fundamental properties of $$\hbox {Cd}_{\mathrm{1-x}}\hbox {Co}_\mathrm{x}$$Te magnetic semiconductor alloys
  17. A new source heterojunction strained channel structure for ballistic gate all around nanowire transistor
  18. Modeling and simulation of the diffusive transport in a nanoscale Double-Gate MOSFET
  19. Yield-driven power-delay-optimal CMOS full-adder design complying with automotive product specifications of PVT variations and NBTI degradations
  20. Computational study of double-gate graphene nano-ribbon transistors
  21. A new approach to analyzing anisotropic and non-parabolic effects on quantum wires
  22. 3D simulation of a silicon quantum dot in a magnetic field based on current spin density functional theory
  23. Numerical analysis of electron optical system with microchannel plate
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