Paper Search Console

Home Search Page About Contact

Journal Title

Title of Journal: J Comput Electron

Search In Journal Title:

Abbravation: Journal of Computational Electronics

Search In Journal Abbravation:

Publisher

Springer US

Search In Publisher:

DOI

10.1007/11693383_3

Search In DOI:

ISSN

1572-8137

Search In ISSN:
Search In Title Of Papers:

Composition dependence of fundamental properties o

Authors: S Zerroug A Gueddim N Bouarissa
Publish Date: 2016/02/23
Volume: 15, Issue: 2, Pages: 473-478
PDF Link

Abstract

Ab initio calculations based on density functional theory have been performed using the fullpotential augmentedplanewave method so as to investigate the composition dependence of the electronic structure and fundamental properties of hypothetical zincblende hbox Cd mathrm1xhbox Co mathrmxhbox Te magnetic semiconductor alloys at low Co concentrations To treat the exchange and correlation energies the generalized gradient approximation GGA of Perdew–Burke–Ernzerhof has been used In addition the modified Becke–Johnson exchange potential with the GGA approach is used for the band structure providing high accuracy It is found that the addition of a small amount of Co atoms in the hbox Cd mathrm1xhbox Co mathrmxhbox Te makes the latter less compressible ferromagnetic and exhibiting a half metallic character Besides the composition dependence of the real and imaginary parts of the dielectric function has been examined and discussed The information derived from the present study may be useful for spintronics technological applications

Keywords:

References

.
Search In Abstract Of Papers:
Other Papers In This Journal:
  1. Towards the global modeling of InGaAs-based pseudomorphic HEMTs
  2. Influence of skin effect on the series resistance of millimeter-wave IMPATT devices
  3. Analog and RF performance investigation of cylindrical surrounding-gate MOSFET with an analytical pseudo-2D model
  4. Performance analysis of fully depleted triple material surrounding gate (TMSG) SOI MOSFET
  5. First-principles study of spin transport in $$\hbox {CrO}_{2}\hbox {-SiCNT-CrO}_{2}$$ magnetic tunnel junction
  6. Full band Monte Carlo simulation of dislocation effects on 250 nm AlGaN-GaN HEMT
  7. Quantum dot blinking: relevance to physical limits for nanoscale optoelectronic device
  8. Electron transport in self-switching nano-diodes
  9. Electron transport in self-switching nano-diodes
  10. Boundary condition at the junction
  11. Piezoelectric effects on carrier capturing time in a hybrid p–n junction system: a numerical study using finite element method
  12. Issues in the modeling of carbon nanotube FETs: Structure, gate thickness, and azimuthal asymmetry
  13. Regional approach to model charges and capacitances of intrinsic carbon nanotube field effect transistors
  14. Dielectric pocket double gate junctionless FET: a new MOS structure with improved subthreshold characteristics for low power VLSI applications
  15. Current progress in modeling self-heating effects in FD SOI devices and nanowire transistors
  16. A new source heterojunction strained channel structure for ballistic gate all around nanowire transistor
  17. Modeling and simulation of the diffusive transport in a nanoscale Double-Gate MOSFET
  18. Yield-driven power-delay-optimal CMOS full-adder design complying with automotive product specifications of PVT variations and NBTI degradations
  19. Computational study of double-gate graphene nano-ribbon transistors
  20. A new approach to analyzing anisotropic and non-parabolic effects on quantum wires
  21. 3D simulation of a silicon quantum dot in a magnetic field based on current spin density functional theory
  22. Numerical analysis of electron optical system with microchannel plate
  23. Exploration of Na + ,K + -ATPase ion permeation pathways via molecular dynamic simulation and electrostatic analysis
Search Result: