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Title of Journal: J Comput Electron

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Abbravation: Journal of Computational Electronics

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Springer US

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DOI

10.1002/ange.18890020301

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1572-8137

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Full band Monte Carlo simulation of dislocation ef

Authors: Fabio Vitobello Nicolas Faralli Shinya Yamakawa Stephen M Goodnick Marco Saraniti
Publish Date: 2008/02/13
Volume: 7, Issue: 3, Pages: 244-247
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Abstract

In this work we present a full band Monte Carlo simulation of the effects of dislocation scattering on the performance of a 025 μm AlGaN/GaN HEMT high electron mobility transistor We performed a full characterization of the device and validated the simulation results with experimental data Lee et al in IEEE Electron Dev Lett 24613–615 2003 Here we show a study of the DC device performance as a function of the density of thread dislocations

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