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Title of Journal: J Comput Electron

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Abbravation: Journal of Computational Electronics

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Kluwer Academic Publishers-Plenum Publishers

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10.1016/0049-3848(86)90067-8

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1572-8137

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3D simulation of a silicon quantum dot in a magnet

Authors: M Lisieri G Fiori G Iannaccone
Publish Date: 2006/12/09
Volume: 6, Issue: 1-3, Pages: 191-194
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Abstract

We have developed a code for the simulation of the electrical and magnetic properties of silicon quantum dots in the framework of the TCAD Package NANOTCADViDES We adopt current spin density functional theory with a local density approximation and with the effective mass approximation We show that silicon quantum dots exhibit large variations of the total spin as the number of electrons in the dot and the applied magnetic field are varied Such properties are mainly due to the silicon band structure and make silicon quantum dots interesting systems for spintronic and quantum computing experiments

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  2. Influence of skin effect on the series resistance of millimeter-wave IMPATT devices
  3. Analog and RF performance investigation of cylindrical surrounding-gate MOSFET with an analytical pseudo-2D model
  4. Performance analysis of fully depleted triple material surrounding gate (TMSG) SOI MOSFET
  5. First-principles study of spin transport in $$\hbox {CrO}_{2}\hbox {-SiCNT-CrO}_{2}$$ magnetic tunnel junction
  6. Full band Monte Carlo simulation of dislocation effects on 250 nm AlGaN-GaN HEMT
  7. Quantum dot blinking: relevance to physical limits for nanoscale optoelectronic device
  8. Electron transport in self-switching nano-diodes
  9. Electron transport in self-switching nano-diodes
  10. Boundary condition at the junction
  11. Piezoelectric effects on carrier capturing time in a hybrid p–n junction system: a numerical study using finite element method
  12. Issues in the modeling of carbon nanotube FETs: Structure, gate thickness, and azimuthal asymmetry
  13. Regional approach to model charges and capacitances of intrinsic carbon nanotube field effect transistors
  14. Dielectric pocket double gate junctionless FET: a new MOS structure with improved subthreshold characteristics for low power VLSI applications
  15. Current progress in modeling self-heating effects in FD SOI devices and nanowire transistors
  16. Composition dependence of fundamental properties of $$\hbox {Cd}_{\mathrm{1-x}}\hbox {Co}_\mathrm{x}$$Te magnetic semiconductor alloys
  17. A new source heterojunction strained channel structure for ballistic gate all around nanowire transistor
  18. Modeling and simulation of the diffusive transport in a nanoscale Double-Gate MOSFET
  19. Yield-driven power-delay-optimal CMOS full-adder design complying with automotive product specifications of PVT variations and NBTI degradations
  20. Computational study of double-gate graphene nano-ribbon transistors
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  22. Numerical analysis of electron optical system with microchannel plate
  23. Exploration of Na + ,K + -ATPase ion permeation pathways via molecular dynamic simulation and electrostatic analysis
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