Authors: Geng Wang Lu Wang Hong Chen Wenxin Wang Zhenwu Shi Yulong Chen Miao He Pingyuan Lu Weining Qian
Publish Date: 2014/05/08
Volume: 59, Issue: 20, Pages: 2383-2386
Abstract
Two kinds of shortperiod type II superlattices SLs InAs 6 monolayers MLs/GaSb 3 MLs and InAs 8 MLs/GaSb 8 MLs which can serve for midinfrared MIR detection have been grown by molecular beam epitaxy MBE on ptype GaSb 100 substrates The cutoff wavelength for the two superlattices SLs was found to be around 48 µm at 300 K The high resolution Xray diffraction HRXRD measurements indicated that the InAs 8 MLs/GaSb 8 MLs SLs have better crystalline quality than that of the InAs 6 MLs/GaSb 3 MLs SLs However compared with infrared absorption in the 25–43 µm range the optical absorption of InAs 6 MLs/GaSb 3 MLs SLs was more excellent This can be attributed to increase probability of the electron and hole wave function overlap in the thinner period thicknessThis work was supported by the National High Technology Research and Development Program of China 2011AA03A112 2011AA03A106 and 2013AA03A101 the National Natural Science Foundation of China 11204360 61210014 the Science Technology Innovation Program of Guangdong Provincial Department of Education of China 2012CXZD0017 the IndustryAcademiaResearch Union Special Fund of Guangdong Province of China 2012B091000169 and the Science Technology Innovation Platform of IndustryAcademiaResearch Union of Guangdong ProvinceMinistry Cooperation Special Fund of China 2012B090600038
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