Authors: Cosmin Popa
Publish Date: 2007/12/19
Volume: 54, Issue: 1, Pages: 1-6
Abstract
A new curvaturecorrection technique for improving the temperature behavior of a CMOS voltage reference will be presented The reducing of the temperature coefficient for the reference voltage will be realized compensating the nonlinear temperature dependence of the gatesource voltage for a MOS transistor working in weak inversion with the difference between two gatesource voltages These MOS transistors are biased at drain currents with different temperature dependencies PTAT and PTAT α respectively α parameter being selected to the optimal value for the implementing technology The PTAT voltage generator will be designed using an original Offset Voltage Follower block with the advantage of a reduced silicon occupied area as a result of replacing classical resistors by MOS active devices SPICE simulation reports TC = 195 ppm/K for an extended temperature range 273 K T 363 K without considering the parameters spread The circuit is compatible with lowpower lowvoltage designed having a maximal power consumption of 04 μW for a minimal supply voltage of 11 V
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