Authors: Pravit Tongpoon Fujihiko Matsumoto Hitoshi Takeuchi Takeshi Ohbuchi Ryutaro Ishio
Publish Date: 2011/09/23
Volume: 72, Issue: 3, Pages: 565-574
Abstract
In this article a novel design of a localfeedback MOS transconductor using a technique of canceling mobility degradation and a linearization technique of differential output current characteristics is proposed In the proposed techniques adaptively biasing current sources are employed to improve linearity deterioration due to mobility degradation effect and to terminate differential output nodes for elimination of secondorder nonlinear terms The proposed transconductor has good linearity Simulation results show that the proposed techniques are effective for improvement of linear characteristics
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