Authors: SeungYeon Kim Nguyen Xuan Hieu JongWook Lee
Publish Date: 2015/01/06
Volume: 82, Issue: 2, Pages: 487-493
Abstract
To improve millimeterwave amplifier performance we propose a transistor layout that reduces the gate access resistance The proposed layout trades overlap capacitance for reduced gate access resistance as shown by transistor parameter extraction The proposed transistor layout improves the maximum available power gain by 15 dB at 67 GHz The extrapolated maximum frequency of oscillation f max also increases by 23 from 913 to 1125 GHz Using the improved transistor layout we design a Vband power amplifier that has enhanced performance The power amplifier fabricated using the proposed transistor achieves 151 dB of smallsignal gain 165 GHz of 3dB bandwidth and an output power of 78 dBm at 615 GHz Compared to an amplifier using conventional layout the smallsignal gain is improved by 37 dB and the output power is increased by 3 dBm at 615 GHz
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