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Title of Journal: Analog Integr Circ Sig Process

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Abbravation: Analog Integrated Circuits and Signal Processing

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Springer US

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DOI

10.1007/s11284-009-0643-0

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1573-1979

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Nonlinear modeling and analysis of a Doherty power

Authors: H Golestaneh A Abdipour A Mohammadi
Publish Date: 2012/03/04
Volume: 72, Issue: 1, Pages: 141-153
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Abstract

A circuitlevel CAD method based on circuit envelope CE simulation is presented to analyze the nonlinear behavior of Doherty power amplifiers DPAs in LDMOS technology when driven by nonconstant envelope signals In this paper a general nonlinear model has been extracted for an RF LDMOS power transistor Then a complete CE analysis is applied to a designed DPA using the extracted model at 35 GHz To solve the CE equation at specific envelope samples analytic expressions are developed for the Jacobian matrix and an effective method for quick calculation is suggested Employing this nonlinear analysis gives insight for optimum design of DPAs and provides an accurate tool to precisely model the nonlinearity of the amplifier in order to predict its distortion effects in modern communication systems

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