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Title of Journal: Analog Integr Circ Sig Process

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Abbravation: Analog Integrated Circuits and Signal Processing

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Springer US

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DOI

10.1002/chin.200052268

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ISSN

1573-1979

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Lowvoltage lowpower improved linearity CMOS acti

Authors: Anca Manolescu Cosmin Popa
Publish Date: 2009/08/12
Volume: 62, Issue: 3, Pages: 373-387
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Abstract

A tutorial of CMOS active resistor circuits will be presented in this paper The main advantages of the proposed implementations are the improved linearity the small area consumption and the improved frequency response In order to improve their linearity improved performances linearization techniques will be proposed with additional care for compensating the errors introduced by secondorder effects Design techniques for minimizing the silicon area consumption will be further presented and FGMOS Floating Gate MOS transistors will be used for this purpose The frequency response of the circuits is very good as a result of biasing all MOS transistors in the saturation region and of a currentmode operation of an important part of their blocks Additionally small changing in each design allows to obtain negative controllable equivalent resistance circuits The circuits are implemented in CMOS technology SPICE simulations confirming the theoretical estimated results showing small values of the linearity error under 015 for the best design for an extended input range and for a supply voltage equal with ±3 V The proposed circuits respond to lowvoltage lowpower requirements their design being adapted to the continuous degradation of the model quality associated with the evolution toward latest nanotechnologies

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