Authors: Velislava A Ignatova Vwe Wätjen Illia V Katardjiev Ivan R Chakarov
Publish Date: 2004/02/27
Volume: 145, Issue: 1-4, Pages: 67-74
Abstract
Antimony ions were implanted into SiO2/Si substrates at energies of 30 and 50 keV at relatively low doses max 5×1015 ions cm−2 The behaviour of the implanted ions was simulated with a dynamic TRIM code allowing treating alteration of the target in a dynamic mode ie as a function of ion dose For cases where the projected range of the implant coincides with the interface it has been observed that there is significant mixing between the SiO2 layer and the Si substrate together with a constant value for the O/Si ratio except for a pronounced oxygen surface peak Whereas in the cases where the implant is far from the interface the O/Si ratio shows characteristic oscillations together with the surface peak For high doses above about 1016 ions cm−2 a gradual increase of the sputtering yield of SiO2 is observed due to Sb incorporation in the substrate The balance between the sputtering and swelling of the target is shown to be negative up to a fluence of 95×1015 ions cm−2 although the total sputtering yield is more than 1 RBS Rutherford Backscattering Spectrometry measurements confirm the mixing at the interface in cases where the latter coincides with the projected range of the implanted ions
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