Authors: Michal Zelechower Joanna Grecka Jan Weszka Miroslawa Kepinska
Publish Date: 2004/02/27
Volume: 145, Issue: 1-4, Pages: 271-273
Abstract
In earlier experiments some irregular effects were observed in the Xray spectra of yttrium doped βsialon ceramics Yttrium Lα was totally absorbed whereas yttrium Kα was present in the spectra Since the only reasonable explanation for these observations seems to be the effect of the silicon Kabsorption edge on the entire absorption of the Y Lα the experimental determination of the Y Lα mass absorption coefficient mac in silicon was performed The silicon layer has been deposited by thermal vacuum evaporation simultaneously on the surfaces of the silica glass plate the nickel plate and on the polished surface of the yttrium oxide sample The siliconcovered silica glass plate was used for the layer thickness measurements interference microscope The silicon layer on the nickel plate was employed in the measurements of the Ni Lα mac value in silicon in order to verify the correctness and accuracy of the methodology The yttrium Lα intensities were then measured at the silicon covered and uncovered parts of the yttrium oxide sample surface The measured intensities were corrected with respect to the primary electron backscattering in silicon and their energy reduction in the layer Typical EPMA instrumentation was used in all measurements The value of the yttrium Lα mass absorption coefficient in silicon computed on the basis of the LambertBeer law appeared to be not lower than 7100 cm2 g−1 against the value of about 3255 cm2 g−1 reported in Xray tables
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