Authors: Rashed Mahameed David Elata
Publish Date: 2008/07/08
Volume: 15, Issue: 2, Pages: 323-331
Abstract
In this work it is theoretically shown that thermoelastic incompatibility between Silicon structures and their nativeoxide layers induces thermoelastic damping This damping dominates in structures that are packaged in vacuum and vibrate in pure axial motion Analytic solutions of the thermoelastic response of axially loaded laminated bars are used to determine the material parameters which affect thermoelastic damping The analysis suggests that thin shieldlayers can significantly reduce thermoelastic damping which is associated with nativeoxide layers in Silicon resonators
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