Authors: Hiroshi Tanaka Hirotaka Hida Kazuo Sato
Publish Date: 2012/11/30
Volume: 19, Issue: 7, Pages: 1065-1067
Abstract
Silicon anisotropic wet etching is applied for fabricating roundshaped microstructures in a size range of submicrons In this work we demonstrate that arbitrary 2D mask patterns having curved profile can be successfully transferred to deepetched cavity profiles on a Si 100 wafer The submicron mask is directly drawn on the Si wafer by irradiating focused ion beam to the wafer surface Anisotropy in etch rate of Si using tetramethyl ammonium hydroxide solution was modified and controlled by adding a surfactant Triton X100 to the solution Etched profile was conformal to etch mask patterns having smooth curvatures
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