Authors: Deepak Bansal Amit Kumar Akshdeep Sharma K J Rangra
Publish Date: 2014/06/20
Volume: 21, Issue: 5, Pages: 1047-1052
Abstract
This paper presents a new single pole double throw SPDT RF MEMS switch design based on a torsional series capacitive switch The torsional configuration and use of floating metal reduce the stiction probabilities Use of a single series capacitive switch compared to the conventional approach of a capacitive and series combination offers compact size higher bandwidth and superior reliability The optimized SPDT topology offers a wider bandwidth of 17 GHz 3–20 GHz with insertion loss of −03 to −04 dB and isolation −20 to −44 dB The proposed structure actuates at 9 V and the contact force varies in the elastic contact regime from 20 to 68 µN for the bias voltage of 10–15 V
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