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Title of Journal: J Mater Sci Mater Electron

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Abbravation: Journal of Materials Science: Materials in Electronics

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Springer US

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DOI

10.1002/ep.10291

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1573-482X

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Atomic layer deposition of hafnium oxide dielectri

Authors: D W McNeill S Bhattacharya H Wadsworth F H Ruddell S J N Mitchell B M Armstrong H S Gamble
Publish Date: 2007/07/06
Volume: 19, Issue: 2, Pages: 119-123
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Abstract

Hafnium oxide films have been deposited at 250 °C on silicon and germanium substrates by atomic layer deposition ALD using tetrakisethylmethylamino hafnium TEMAH and water vapour as precursors in a modified Oxford Instruments PECVD system Selflimiting monolayer growth has been verified characterised by a growth rate of 0082 nm/cycle Layer uniformity is approximately within ±1 of the mean value MOS capacitors have been fabricated by evaporating aluminium electrodes CV analysis has been used to determine the bulk and interface properties of the HfO2 and their dependence on preclean schedule deposition conditions and postdeposition annealing The dielectric constant of the HfO2 is typically 18 On silicon best results are obtained when the HfO2 is deposited on a chemically oxidised hydrophilic surface On germanium best results are obtained when the substrate is nitrided before HfO2 deposition using an insitu nitrogen plasma treatment

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