Authors: Zhitao Zhou Fengjiao Shang Guangcai Pan Feng Wang Changlong Liu Wanbing Gong Zhenfa Zi Yiyong Wei Jianguo Lv Xiaoshuang Chen Gang He Miao Zhang Xueping Song Zhaoqi Sun
Publish Date: 2014/03/05
Volume: 25, Issue: 5, Pages: 2053-2059
Abstract
Mg005Zn095O thin films were prepared on silicon substrates by a sol–gel dipcoating technique Microstructure surface topography and optical properties of the thin films were characterized by Xray diffraction atom force microscopy Fourier transform infrared spectrophotometer and fluorescence spectrometer The results show that the thin film annealed at 700 °C has the largest average grain size and exhibits the best caxis preferred orientation As annealing temperature increases to 800 °C the grain along caxis has been suppressed Roughness factor and average particle size increase with the increase of annealing temperature The IR absorption peak appearing at about 416 cm−1 is assigned to hexagonal wurtzite ZnO The thin film annealed at 700 °C has the maximum oxygen vacancy which can be inferred from the green emission intensity Photocatalytic results show that the thin film annealed at 700 °C exhibits remarkable photocatalytic activity which may be attributed to the larger grain size roughness factor and concentration of oxygen vacancy Enhanced photocatalytic activity of Mg005Zn095O thin films after a cycle may be attributed to the increase of surface oxygen vacancy and photocorrosion of amorphous MgO on the surface of thin film under UV irradiationThis work was supported by State Key Program for Basic Research of China 2013CB632705 National Natural Science Foundation of China Nos 11334008 61290301 51072001 51272001 51002156 51102072 China Postdoctoral Science Foundation No 2012M520944 Anhui Provincial Natural Science Foundation Nos 1208085MF99 1208085QA16 Natural Science Foundation of Anhui Higher Education Institution of China No KJ2012Z336 Shanghai Postdoctoral Science Foundation No 12R21416800 Funds for Distinguished Young Scholar of Anhui University No KJJQ1103
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