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Title of Journal: J Mater Sci Mater Electron

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Abbravation: Journal of Materials Science: Materials in Electronics

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Springer US

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DOI

10.1007/bf00252970

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1573-482X

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Investigation of nanostructured silicon as a candi

Authors: Jing Jiang Shibin Li Zhanfei Xiao Yuanjie Su Zhiming Wu Yadong Jiang
Publish Date: 2012/12/07
Volume: 24, Issue: 6, Pages: 1770-1774
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Abstract

Nanoscale pores are fabricated on the surface of silicon by simple metalassisted etching process The resistance of nanostructured silicon depends obviously on temperature The temperature coefficient of resistance is −2835 /°C which is as large as that of some heat sensitive materials for instance vanadium oxide amorphous silicon used for uncooled infrared IR detectors Considering with the enhanced nearIR absorption of nanostructured silicon it is demonstrated that nanostructured silicon can be a promising heat sensitive material for uncooled IR detection The sheet carrier concentration is slightly reduced whereas carrier mobility is drastically decreased from 3675 to 2737 cm2 V−1 s−1 after nanostructuring process

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