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Title of Journal: J Mater Sci Mater Electron

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Abbravation: Journal of Materials Science: Materials in Electronics

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Springer US

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DOI

10.1002/0470012285.ch15

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ISSN

1573-482X

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A new method of depositing high figureofmerit po

Authors: QiangXiang Peng WenBo Luo Jia Meng WuYue Fu Xiao Qing XiangYu Sun Yao Shuai ChuanGui Wu WangLi Zhang
Publish Date: 2013/11/08
Volume: 25, Issue: 1, Pages: 297-302
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Abstract

The effects of hydrothermal synthesized 001oriented PZT nanorods on the pyroelectric properties of PZT thick film fabricated by electrophoresis deposition were studied in a range from 750 to 900 °C It was revealed by scanning electron microscopy that the pores are mainly distributed in the film body but not at the electrode interface which would improve the adhesion and electric contact between the thick film and electrode The formation and distribution of the pores resulted from the PZT nanorods were schematically explained It was found that the relative dielectric constant ε r of the PZT nanoroddoping film sintered at 800 °C was lowered by approximate 465  Accordingly the calculated figures of merit for voltage responsivity FV and detectivity FD were improved by 125 and 114  respectively These results demonstrated that a new way to deposit PZT porous thick film with low dielectric constant and high figures of merit was established

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