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Title of Journal: J Mater Sci Mater Electron

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Abbravation: Journal of Materials Science: Materials in Electronics

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Springer US

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DOI

10.1002/ardp.186617501109

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1573-482X

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Effects of glass additions on the dielectric prope

Authors: Shengchen Chen Tongqing Yang Jinfei Wang Xi Yao
Publish Date: 2013/09/01
Volume: 24, Issue: 12, Pages: 4764-4768
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Abstract

In this work CdO–Bi2O3–PbO–ZnO–Al2O3–B2O3–SiO2 low softening point glass powders were prepared and employed as sintering aid to improve the dielectric breakdown strength and reduce the sintering temperature of Pb097La002Zr056Sn035Ti009O3 antiferroelectric ceramics The effects of glass content and sintering temperature on the densification microstructure dielectric properties and energy storage performance of Pb097La002Zr056Sn035Ti009O3 antiferroelectric ceramics have been investigated With inclusion of glass sintered densities comparable to those obtained by conventional sintering are achieved at only 1050 °C The breakdown strength of glassadded samples was notably improved due to the reduction of the grain size The antiferroelectric to ferroelectric switching field and the ferroelectric to antiferroelectric field both increased with increasing glass content The dielectric constant and dielectric loss decreased gradually with increasing glass content As a result the highest recoverable energy density of 33 J/cm3 with an energy efficiency of 80  was achieved in 4 wt glassadded sample sintered at 1130 °C

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