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Title of Journal: J Mater Sci Mater Electron

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Abbravation: Journal of Materials Science: Materials in Electronics

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Springer US

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1573-482X

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AlSubscriptx/SubscriptSnSubscript2/Subscri

Authors: Yifeng Hu Xiaoqin Zhu Hua Zou Yi Lu Jianzhong Xue Yongxing Sui Weihua Wu Li Yuan Sannian Song Zhitang Song
Publish Date: 2015/07/09
Volume: 26, Issue: 10, Pages: 7757-7762
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Abstract

Phase change behavior in AlxSn2Se31−x x = 0003 0010 0023 films were investigated by utilizing in situ resistance measurements It is found that the crystallization temperatures and resistances increase with increasing of Al content The analysis of Xray diffraction indicates that the grain size decreases and the crystallization is suppressed by more Al doping Al0023Sn2Se30977 has an excellent thermal stability with the crystallization activation energy of 379 eV and the failure time is longer than that of Ge2Sb2Te5 film The crystallization speed of Al0023Sn2Se30977 film is faster than that of GST The phase transition kinetics of Al0023Sn2Se30977 films were investigated The obtained values of Avrami indexes indicate that a one dimensional growthdominated mechanism is responsible for the amorphous–crystalline transformation of Al0023Sn2Se30977 film We conclude that Al0023Sn2Se30977 film is a good candidate for phasechange randomaccess memory applications with good thermal stability and high switching speed

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