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Title of Journal: J Mater Sci Mater Electron

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Abbravation: Journal of Materials Science: Materials in Electronics

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Springer US

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1573-482X

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Temperaturedependent complex impedance electrica

Authors: Dalibor L Sekulic Zorica Z Lazarevic Miljko V Sataric Cedomir D Jovalekic Nebojsa Z Romcevic
Publish Date: 2015/01/23
Volume: 26, Issue: 3, Pages: 1291-1303
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Abstract

Effect of temperature on electrical and dielectric properties of MFe2O4 M = Mn Ni Zn ferrites has been investigated in a wide frequency range 100 Hz to 1 MHz Ferrite ceramics under study were successfully fabricated by a conventional sintering of nanosized powders 1100 °C/2 h synthesized by soft mechanochemical processing The structural studies have been carried out using the transmission electron microscopy Xray diffraction and scanning electron microscopy Direct current DC resistivity of all samples decreases with increasing temperature while drift mobility increases exhibiting the typical semiconductorlike behaviour Activation energy is calculated by using Arrhenius type resistivity plots The analysis of experimental data indicates that alternating current AC conductivity is mainly due to the hopping mechanism which is discussed in terms of Maxwell–Wagner twolayer model The dielectric behaviour is explained by using the mechanism of polarization process which is correlated to that of electron exchange interaction Niferrite possesses the lowest value of conductivity of 10−7 Ωcm−1 whereas Znferrite has the highest dielectric constant value of 2641 at frequency of 1 kHz and room temperature The complex impedance spectroscopy was used to study the effect of microstructures on the electrical properties of sintered ferrites using equivalent circuits It was found that the electrical resistivity is predominantly controlled by the grain boundaries

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