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Title of Journal: J Mater Sci Mater Electron

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Abbravation: Journal of Materials Science: Materials in Electronics

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Springer US

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DOI

10.1016/0370-2693(94)01455-l

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1573-482X

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Copper diffusion in germanium connecting point de

Authors: A Chroneos Y Panayiotatos R V Vovk
Publish Date: 2015/01/29
Volume: 26, Issue: 5, Pages: 2693-2696
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Abstract

Copper diffusion in germanium is fundamentally and technologically important as it has a very low activation energy and influences the precipitation and gettering of copper respectively These constitute the understanding of copper’s diffusion properties in germanium over a range of temperatures and pressures important In the present study we use the cBΩ model in which the defect Gibbs energy is proportional to the isothermal bulk modulus B and the mean volume per atom Ω The elastic and expansivity data is used in the description of the cBΩ model to derive the copper interstitial diffusion coefficient in germanium in the temperature range 827–1176 K The calculated results are discussed in view of the available experimental data

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