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Title of Journal: J Mater Sci Mater Electron

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Abbravation: Journal of Materials Science: Materials in Electronics

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Springer US

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DOI

10.1016/0148-9062(87)90311-1

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ISSN

1573-482X

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High speed and low power consumption of superlatti

Authors: Weihua Wu Yifeng Hu Xiaoqin Zhu Yongxing Sui Li Yuan Long Zheng Hua Zou Yuemei Sun Sannian Song Zhitang Song
Publish Date: 2015/11/14
Volume: 27, Issue: 3, Pages: 2183-2188
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Abstract

In comparison to Ge2Sb2Te5 GST and pure Sb70Se30 SbSe thin films superlatticelike SLL Ge/Sb70Se30 Ge/SbSe has a higher crystallization temperature larger crystallization activation energy better data retention and lower power consumption SLL Ge/SbSe thin films with different thickness of Ge and SbSe layers were prepared by magnetron sputtering system The amorphoustocrystalline transitions of SLL Ge/SbSe thin films were investigated through in situ film resistance measurement The crystallization activation energy of SLL Ge/SbSe thin films was calculated from a Kissinger plot The data retention time was estimated through isothermal timedependent resistance measurement by Arrhenius equation The phase structure of the thin films annealed at different temperatures was investigated by using Xray diffraction Phase change memory cells based on the SLL Ge8 nm/SbSe5 nm4 thin films were fabricated to test and evaluate the switching speed and operation consumptionThe authors would like to acknowledge financial support of the Scientific Research Fund Project of Jiangsu University of Technology KYY14011 the Natural Science Foundation of Jiangsu Province BK2015020024 the University Natural Science Foundation of Jiangsu Province 15KJB430012 the Changzhou Sci and Tech Program Grant No CJ20159049 and the Open Fund of State Key Laboratory of Functional Materials for Informatics KYZ14031

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