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Title of Journal: J Mater Sci Mater Electron

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Abbravation: Journal of Materials Science: Materials in Electronics

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Springer US

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1573-482X

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Raman scattering characterization of Gecompositio

Authors: M R Islam M Yamada
Publish Date: 2007/12/05
Volume: 19, Issue: 1, Pages: 294-298
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Abstract

Raman scattering RS characterization has been made to determine the Gecomposition in crystalline bulk Si−x Ge x with compositional variation along the radial direction in roundshaped wafer The Raman integrated intensity ratio RIIR of phonons is found to have radial compositional dependence in the experimental results It is also found from the precise RS experiments that the shift in optical phonons is dependent on the composition and the residual strain due to the radial variation of composition Using the RIIR of Si–Ge to Si–Si phonons the compositions are evaluated along the diameter of the sample Independently the compositions are evaluated taking into account of strain effect in the shift of optical phonons and the energy band gap measured by optical transmission experiments The results obtained from the two different methods are found to be in excellent agreement

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