Authors: XinAn Zhang JingWen Zhang WeiFeng Zhang Xun Hou
Publish Date: 2009/09/16
Volume: 21, Issue: 7, Pages: 671-675
Abstract
Transparent ZnO thin film transistors ZnO–TFTs with different structures and dielectric layers were fabricated by rf magnetron sputtering The PbTiO3 AlO x SiN x and SiO x films were attempted to serve as the gate dielectric layers in the devices respectively and XRD was employed to investigate the crystal structure of ZnO films deposited on these dielectric layers The optical properties of transparent TFTs were measured and revealed the average transmittance ranged from 60 to 80 in the visible part of the spectrum Electrical measurement shows the properties of the ZnO–TFTs have great relations with the device structure The bottomgate TFTs have better behaviors than topgate ones with the mobility threshold voltage and the current on/off ratio of 184 cm2 V−1 s−1 −07 V and 104 respectively The electrical difference of the devices may be due to different character of the interface between the channel and dielectric layers
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