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Title of Journal: J Mater Sci Mater Electron

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Abbravation: Journal of Materials Science: Materials in Electronics

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Springer US

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DOI

10.1007/11689522_10

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1573-482X

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The oxidation process of NiSiSubscriptx/Subscri

Authors: Qixiang Zhang Jindong Liu Yunxian Cui Wanyu Ding
Publish Date: 2015/02/14
Volume: 26, Issue: 5, Pages: 3291-3298
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Abstract

The NiSix film was deposited onto the quartz substrates by the direct current pulsed magnetron sputtering technique With the increase of annealing temperature from 100 to 800 °C in air the NiSix films with different properties were obtained The characterization by Hall effect system showed that the electrical property of NiSix film was abrupltly deteriorated at the annealing temperature over 500 °C in air The characterization by Xray diffraction XRD system showed that the oxidation of Ni in NiSix film started and completed at the temperature of 400 and 600 °C in air respectively The scanning electron microscopy resuls showed that the oxidation of NiSix film started at the pinholes/defects on film surface and then diffused to the whole film In order to avoid the oxidation of NiSix film at high temperature in air the SiOxNy film was deposited onto the NiSix film by the same technique The XRD results showed that the dense SiOxNy film could prevent the NiSix film from the oxidation at temperature of 800 °C in air With the SiOxNy film the NiCrx–NiSix film thermocouple could normally service at temperature of 800 °C in airThis work was supported by the National Natural Science Foundation of China Nos 51472039 51102030 Project of Education Department of Liaoning Province China No L2013184 Natural Science Foundation of Liaoning Province China No 201202024 Science and technology projects of Liaoning Province China No 2012220007 Dalian Science and Technology Plan Project China No 2012A12GX017 and Project of Open Research Foundation of State Key Laboratory of Advanced Technology for Float Glass No KF130101

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