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Title of Journal: J Mater Sci Mater Electron

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Abbravation: Journal of Materials Science: Materials in Electronics

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Springer US

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DOI

10.1007/bf00743425

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1573-482X

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111Oriented PbZrSubscript052/SubscriptTi

Authors: M Khodaei S A Seyyed Ebrahimi Yong Jun Park Seungwoo Song Hyun Myung Jang Junwoo Son Sunggi Baik
Publish Date: 2013/06/07
Volume: 24, Issue: 10, Pages: 3736-3743
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Abstract

Perovskite PbZr052Ti048O3 PZT thin film with perfect 111orientation was achieved on CoFe2O4 seededPt111/Ti/SiO2/Si substrate by pulsed laser deposition technique using target with limited excess Pb Pyrochlore phase formation was suppressed on Pt by CoFe2O4 nanoseed layer ~7 nm and perovskite PZT was achieved at temperature as low as 550 °C CoFe2O4 seed layer that has perfect 111orientation acts as a promoter for perfectly 111orientated growth of PZT PZT film grown at 600 °C has higher degree of crystalline orientation lower surface roughness and compacted microstructure in comparison to the film grown at 550 °C The PZT film has a nanosize grainfeature structure with grain size of about 40–60 nm Perovskite formation was also confirmed by ferroelectric measurement The ferroelectric properties of PZT film grown at 600 °C is higher than that grown at 550 °C which could be attributed to the enhancement of the crystalline orientation crystallinity and microstructure of the film

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