Authors: H Çakmak Engin Arslan M Rudziński P Demirel H E Unalan W Strupiński R Turan M Öztürk E Özbay
Publish Date: 2014/06/11
Volume: 25, Issue: 8, Pages: 3652-3658
Abstract
This study focuses on both epitaxial growths of InxGa1−xN epilayers with graded In content and the performance of solar cells structures grown on sapphire substrate by using metal organic chemical vapor deposition The high resolution Xray and Hall Effect characterization were carried out after epitaxial InGaN solar cell structures growth The In content of the graded InGaN layer was calculated from the Xray reciprocal space mapping measurements Indium contents of the graded InGaN epilayers change from 88 to 71 in Sample A 157–71 in Sample B and 266–151 in Sample C The current voltage measurements of the solar cell devices were carried out after a standard micro fabrication procedure Sample B exhibits better performance with a shortcircuit current density of 6 mA/cm2 opencircuit voltage of 025 V fill factor of 3913 and the best efficiency measured under a standard solar simulator with onesun air mass 15 global light sources 100 mW/cm2 at room temperature for finished devices was 066
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