Authors: N Janene M Salem M Ben Rabha M A El Khakani B Bessais H Alawadhi M Gaidi
Publish Date: 2014/12/11
Volume: 26, Issue: 3, Pages: 1585-1590
Abstract
This work reports on passivation effect of solargrade multicrystalline Si mcSi using a TiO2/porous silicon double coating For this purpose TiO2 nanoparticles were deposited onto porous silicon PS/mcSi using pulsed laser ablation of titanium target The structural and optoelectronic properties of the TiO2/PS treated mcSi substrates were investigated by Xray diffraction Raman spectroscopy optical spectrometry photoconductance and photoluminescence PL It was found that the minority carrier lifetime τ eff of the mcSi wafer could enhance at a nominal thickness of the TiO2 film nanoparticle sizes This was attributed to a surface passivation of the mcSi wafer via TiO2passivation of the PS film whose PL intensity improves consequently An optimal TiO2 thickness of 80 nm was found to give the highest PL intensity and an enhancement of the minority carrier lifetime from 5 µs for untreated mcSi wafer to about 391 µs for a TiO2/PS treated wafers
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