Authors: Ke Zhu Haibin Wang Faxin Xiao Feng Xu
Publish Date: 2017/02/01
Volume: 28, Issue: 10, Pages: 7302-7306
Abstract
Al doped zinc oxide AZO thin films were deposited on AZO buffered glass substrates by DC magnetron sputtering The effect of buffer thickness on the electrical structural morphological and optical properties of the AZO thin films was studied experimentally As the buffer thickness increased the resistivity of AZO thin film decreased from 64 × 10−4 Ω cm no buffer to 38 × 10−4 Ω cm 160nmthick buffer and the corresponding mobility increased from 334 to 512 cm2/Vsresulting from an improvement of crystallinity The haze factor of the AZO thin films increased with increasing buffer thickness up to 160 nm and then slightly decreased A high average haze factor of 567 in the range from 400 to 1100 nm was obtained in the thin film that incorporated a 160nmthick buffer which was attributed to the large feature size of the craters on the surface and the high RMS surface roughnessThis work is supported by the Science and Technology Planning Project of Hengyang Grant No 2016KJ15 the National Natural Science Foundation of China Grant No 11404110 and the Outstanding Young Program of Hunan Provincial education department of China Grant No 14B046
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