Authors: H G Çetinkaya Ş Altındal I Orak I Uslu
Publish Date: 2017/02/09
Volume: 28, Issue: 11, Pages: 7905-7911
Abstract
In order to see effects of interfacial with and without different graphene GP + Ca19Pr01Co4Oxdoped PVA layer on the electrical characteristics of conventional Au/nSi MS contacts Therefore Au/GP + Ca19Pr01Co4Oxdoped PVA/nSi MPS structures were fabricated with different rates of 3 GP 7 GP PVA and were fabricated on same nSi wafer Au/nSi MS Au/PVA/nSi Au/3GP + Ca19Pr01Co4Oxdoped PVA/nSi and Au/7GP + Ca19Pr01Co4Oxdoped PVA/nSi structures were fabricated and their main electrical characteristics compared each other by using current–voltage I–V methods The forward and reverse bias current voltage I–V characteristics of with and without GP + Ca19Pr01Co4Oxdoped PVA/nSi at room temperature were studied to investigate its main electrical parameters The energy density distribution profile of the interface states Nss was obtained from the forward bias I–V data by taking into account voltage dependent ideality factor nv and effective barrier height Φe and they increase from at about midgap energy of Si to bottom of conductance band edge In addition voltage dependent profile of resistivity of the structure was obtained from I–V data for four different structures The analysis of experimental results reveals that the existence of GP + Ca19Pr01Co4Oxdoped PVA interfacial layer improves the performance of MS structure In order to determine the dominant currenttransport mechanism CTM in the whole forward bias region of these structures the double logarithmic forward bias I–V plots were also drawn These plots exhibit two distinct linear region with different slopes which are corresponding to intermediate and high forward bias voltages The slope of these plots show that in the region 1 low biases the dominant CTM is trapchargelimited current TCLC whereas in the region 2 high biases is spacechargelimited current SCLC for four diodes
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