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Title of Journal: J Mater Sci Mater Electron

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Abbravation: Journal of Materials Science: Materials in Electronics

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Springer US

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DOI

10.1007/bf02739353

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1573-482X

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Optical properties of nanocrystalline silicon depo

Authors: M R EsmaeiliRad A Sazonov A G Kazanskii A A Khomich A Nathan
Publish Date: 2007/03/31
Volume: 18, Issue: 1, Pages: 405-409
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Abstract

Nanocrystalline silicon ncSi thin films were deposited by 1356 MHz plasma enhanced chemical vapor deposition PECVD using silane plasma highly diluted in hydrogen to induce microstructural changes from amorphous to nanocrystalline Raman spectroscopy measurements showed that ncSi films can be obtained at hydrogen dilutions greater than 98 High hydrogen dilution in conjunction with high reactor pressure lead to lower absorption of photon energies less than 11 eV and consequently to lower defect density inside ncSi thin films The ncSi dark conductivity dark conductivity activation energy and photosensitivity were in the range 10−6 S/cm 043 eV and 1020 respectively Photocurrent spectra showed absorption peaks at photon energies around 25 32 and 45 eV Measured optical bandgaps were in the range of 23–25 eV

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