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Title of Journal: J Mater Sci Mater Electron

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Abbravation: Journal of Materials Science: Materials in Electronics

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Springer US

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DOI

10.1007/s11010-005-9066-6

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1573-482X

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Effect of the substrate temperature on the structu

Authors: Metin Bedir Mustafa Öztaş Hüsniye Kara
Publish Date: 2012/09/16
Volume: 24, Issue: 2, Pages: 499-506
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Abstract

Boron doped CdS films have been deposited by spray pyrolysis method onto glass substrate temperature in the range of 350–450 °C And the effect of substrate temperature T s on the structural electrical and optical properties of the films were studied The structural properties of boron doped CdS films have been investigated by XRD Xray diffraction techniques The Xray diffraction spectra showed that boron doped CdS films are polycrystalline and have a hexagonal wurtzite structure By using SEM analysis the surface morphology of the films was observed as an effect of the variation of substrate temperature The substrate temperature is directly related with the shift detected in the band gap values derived from optical of parameters and the direct band gap values were found to be in the region of 208–244 eV The electrical studies showed that the film deposited at the substrate temperature 400 °C had high carrier concentration and Hall mobility and minimum resistivity This resistivity value decreased with increase in temperature up to 400 °C indicating the semiconducting nature of B doped CdS films The lattice parameter grain size microstrain and dislocation densities were calculated and correlated with the substrate temperature T s

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