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Title of Journal: J Mater Sci Mater Electron

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Abbravation: Journal of Materials Science: Materials in Electronics

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Springer US

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DOI

10.1002/aic.690440101

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1573-482X

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Properties of pulse electrodeposited copper galliu

Authors: S Vadivel K Srinivasan K R Murali
Publish Date: 2013/02/10
Volume: 24, Issue: 7, Pages: 2500-2505
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Abstract

Copper gallium sulphide films were deposited for the first time by the pulse electrodeposition technique at different duty cycles in the range of 6–50  at room temperature and at a constant current density of 10 mA cm−2 The films exhibited single phase copper gallium sulphide The grain size increased from 30 to 70 nm with increase of duty cycle Optical band gap of the films varied in the range of 230–236 eV The resistivity increased from 010 to 170 ohm cm with increase of duty cycle from 6 to 50  Preliminary studies on solar cells with pCuGaS2/nCuInS2 junction yielded an efficiency of 414  This is the first report on solar cells using CuGaS2 with CuInS2

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