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Title of Journal: J Mater Sci Mater Electron

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Abbravation: Journal of Materials Science: Materials in Electronics

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Springer US

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DOI

10.1016/j.bandc.2009.08.007

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1573-482X

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Sizes effect of CeSnSubscript3/Subscript on th

Authors: Liang Zhang Lei Sun Jiguang Han Yonghuan Guo
Publish Date: 2015/06/04
Volume: 26, Issue: 8, Pages: 6194-6197
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Abstract

The relationship between Ce content/CeSn3 sizes and the whiskers growth is newly reported systematically The whiskers growth can be observed in the surface of bulk CeSn3 particles the rate of whisker growth was significantly slowed with Ce content lower than 01 wt At higher concentration of Ce whisker growth rate becomes higher and noticeable It is thought that the higher Ce chemical potential for oxidation provides a path for the mechanism of whisker growth With all the other benefits of Ce addition the potential to promote whisker growth indicate that only dilute concentration of Ce can be tolerated in SnAgCu alloys without whiskering effect The results demonstrated that the trace amount of Ce can be utilized as additive into SnAgCu solder in microelectronic industryThe present work was carried out with the support of the Natural Science Foundation of China 51475220 the Natural Science Foundation of Jiangsu Province BK2012144 the Natural Science Foundation of the Higher Education Institutions of Jiangsu Province 12KJB460005 the Jiangsu University of Science and Technology Provincial Key Lab of Advanced Welding Technology Foundation JSAWS1103 and the Jiangsu Normal University Foundation 11XLR16

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